教師個人簡歷
現職
國立中央大學
資訊電機學院電機工程學系
教授
專長
氧化物半導體元件
熱偵測元件
熱電材料、元件和模組
Oxide semiconductor components
heat detection components
thermoelectric materials, components and modules
專長簡述
氧化物半導體元件/熱偵測元件/熱電材料、元件和模組
最高學歷
國立清華大學
材料科學(工程)學系
博士
科技部學門領域
政府GRB研究專長領域
教育部學門領域
國科會計畫統計
-
鎂-銀-銻-銅-鉍新穎高熵合金的熱電性能優化
1160301~1170229
-
鎂-銀-銻-銅-鉍新穎高熵合金的熱電性能優化
1150301~1160228
-
p型鎂銀銻和n型鎂矽錫熱電材料及模組組成技術以用於熱電能源擷取
1140801~1150731
-
鎂-銀-銻-銅-鉍新穎高熵合金的熱電性能優化
1140301~1150228
-
p型鎂銀銻和n型鎂矽錫熱電材料及模組組成技術以用於熱電能源擷取
1130801~1140731
-
p型鎂銀銻和n型鎂矽錫熱電材料及模組組成技術以用於熱電能源擷取
1120801~1130731
-
鎂矽鍺錫/二氧化矽奈米複合熱電塊材及模組
1110801~1120731
[熱電材料,熱電優值,矽奈米粉末,鎂矽鍺錫,二氧化矽奈米粒子 , thermoelectric materials,figure of merit,Mg2(Si,Ge,Sn),Si nanowire powder,SiO2 nanoparticles] -
鎂矽鍺錫/二氧化矽奈米複合熱電塊材及模組
1100801~1110731
[熱電材料,熱電優值,矽奈米粉末,鎂矽鍺錫,二氧化矽奈米粒子 , thermoelectric materials,figure of merit,Mg2(Si,Ge,Sn),Si nanowire powder,SiO2 nanoparticles] -
鎂矽鍺錫/二氧化矽奈米複合熱電塊材及模組
1090801~1100731
[熱電材料,熱電優值,矽奈米粉末,鎂矽鍺錫,二氧化矽奈米粒子 , thermoelectric materials,figure of merit,Mg2(Si,Ge,Sn),Si nanowire powder,SiO2 nanoparticles] -
可應用於熱電模組之P型之金屬氧化物及硫化物熱電複合材料及其模組性能測試
1080801~1090731
[氧化鋅,硫化銅,熱電材料,工業廢熱回收,熱電模組, , ZnO,CuS,thermoelectric material,industrial waste heat scavenging,thermoelectric module] -
無緩衝層之類單晶鍺/鍺錫異質接面製程技術開發及崩潰累增型光偵測器製作以應用於光積電技術
1070801~1080731
[光訊號傳輸, 光積電技術, 鍺/錫單晶薄膜, 快速熱熔異質磊晶成長, 微區拉曼光譜,光偵測器,元件高頻特性. , optical interconnect, single crystalline Ge/GeSn mesa, rapid-melting-growth technique, micro Raman, photodetector, high-frequency characteristics] -
矽基熱電複合材料及模組組裝技術
1060801~1070731
[矽化物,矽化鎂,熱電材料,模組組裝 , silicide, Mg2Si, thermoelectric materials, module assembly] -
產學合作-熱電特性變溫量測系統2/2
1051101~1061031
[熱電特性,量測系統,機台,溫控 , thermoelectric property,measurement system,apparatus,temperature control] -
碲化鉍/矽複合式厚膜熱電元件雛型開發2/2
1050801~1060731
[熱電, 碲化鉍, 矽, 厚膜製程, 擴散障礙層, 可靠度, 封裝, 低溫廢熱回收, , thermoelectric, Bi2Te3, Si, thick film, diffusion barrier, reliability, package, low-temperature thermal scavenge] -
高熱電優值係數矽基奈米粉末所組成之熱電塊材
1050101~1051231
[熱電材料,熱電優值,聲子散射,矽奈米粉末,二氧化矽奈米粒子 , thermoelectric materials,figure of merit,phonon scattering,Si nanowire powder,SiO2 nanoparticles] -
產學合作計畫-熱電特性變溫量測系統1/2
1041101~1051031
[thermoelectric property,measurement system,apparatus,temperature control ] -
碲化鉍/矽複合式厚膜熱電元件雛型開發2/2
1040801~1050731
[熱電, 碲化鉍, 矽, 厚膜製程, 擴散障礙層, 可靠度, 封裝, 低溫廢熱回收, , thermoelectric, Bi2Te3, Si, thick film, diffusion barrier, reliability, package, low-temperature thermal scavenge]
產學合作計畫統計
-
產學合作-熱電特性變溫量測系統2/2
1051101~1061031
[熱電特性,量測系統,機台,溫控 , thermoelectric property,measurement system,apparatus,temperature control] -
產學合作計畫-熱電特性變溫量測系統1/2
1041101~1051031
[thermoelectric property,measurement system,apparatus,temperature control ]
期刊著作
-
Fabrication and characterization of two-dimensional Zn-doped Ga₂O₃-based oxide films using liquid metal alloys
Surfaces and Interfaces, 75, 2025-10-15
[ Doping,Liquid EGaIn-Zn alloy,Liquid Ga-Zn alloy,Liquid Metal ] -
Advanced fabrication and contact strategies for high-performance MgAgSb thermoelectric materials
MRS Communications, 15, 4, 873-879, 2025-08-01
[ Alloy,Metal,Powder processing,TEM,Thermoelectric ] -
Synergistic effect of Mn5Si3 nanopowders on the thermoelectric properties of magnesium- silicide-stannide
Nanotechnology, 36, 25, 2025-06-23
[ magnesium-silicide-stannide,Mg2.2(Si0.4Sn0.6),Mg2(Si0.4Sn0.6),Mn5Si3 ] -
Thermoelectric Modules Using Earth-Abundant Elements: The Case of Zn, Cu, Al, O, and S
IEEE Transactions on Nanotechnology, 24, 417-420, 2025-01-01
[ Al-doped ZnO,CuS/ZnO alloy,earth-abundant elements,figure of merit ZT,Thermoelectric module ] -
A Versatile Route for Converting n-Type ZnO into p-Type: Phosphorus Doping of Nanostructures and Powders
ACS Applied Electronic Materials, 6, 12, 9047-9052, 2024-12-24
[ conductivity,nanowire,p-type,piezoelectric,ZnO ] -
Thermal conductivity suppression in ZnO with AlZn2O4and ZnP2for thermoelectric applications
Nanotechnology, 36, 6, 2024-11-25
[ AlZn2O4 and ZnP2,nanopowder,thermal conductivity,ZnO ] -
Enhanced Thermoelectric Properties of P-Type Sn-Substituted Higher Manganese Silicides
Nanomaterials, 14, 6, 2024-03-01
[ figure of merit,higher manganese silicide,spark plasma sintering,thermal conductivity,thermoelectric ] -
MgAgSb thermoelectric composite and the effect of doping species
MRS Communications, 13, 6, 1226-1231, 2023-12-01
[ Alloy,Composite,Dopant,Thermal conductivity,Thermoelectric ] -
Formation of porous Mg2(SiSn) by nanoparticle alloying and its thermoelectric properties
Materials Research Bulletin, 161, 2023-05-01
[ Alloy,Mg2(Si0.4Sn0.6),Mg2Si,Mg2Sn,Porous ] -
Thermoelectric properties of Zn- and Ce-alloyed In2O3and the effect of SiO2nanoparticle additives
Nanotechnology, 33, 13, 2022-03-26 -
Porous Mg2(SiSn) thermoelectric composite with ultra-low thermal conductivity in submillimeter scale
Applied Physics A: Materials Science and Processing, 127, 12, 2021-12-01
[ Composite,Porosity,Powder processing,Thermal conductivity,Thermoelectric ] -
Wave-Guided Lateral-Configured Ge-Ge-Si Photodetectors Obtained by Rapid Melting Growth Technique
IEEE Photonics Technology Letters, 32, 3, 174-177, 2020-02-01
[ Ge , PIN photodetectors , rapid-melting growth , waveguide ] -
Anisotropy of thermal conductivity in In2Se3 nanostructures
Applied Surface Science, 494, 867-870, 2019-11-15
[ Anisotropy , In Se 2 3 , Nanostructures , TEM , Thermal conductivity ] -
The Linearly Temperature-Dependent Thermal Conductivity Across the Transition Temperature of Polycrystalline YBa2Cu3O6.9
Journal of Superconductivity and Novel Magnetism, 32, 8, 2289-2293, 2019-08-15 -
Buffer-Free Ge/Si by Rapid Melting Growth Technique for Separate Absorption and Multiplication Avalanche Photodetectors
IEEE Electron Device Letters, 40, 6, 945-948, 2019-06-01
[ avalanche photodetectors , Ge , rapid-melting-growth , separate absorption and multiplication ] -
Synthesis and thermoelectric properties of indium telluride nanowires
Materials Research Bulletin, 112, 61-65, 2019-04-01
[ In Te seebeck 2 3 , Nanowires , Thermal conductivity , Thermoelectric materials ] -
Thermoelectric Devices by Half-Millimeter-Long Silicon Nanowires Arrays
IEEE Transactions on Nanotechnology, 18, 921-924, 2019-01-01
[ figure of merit ZT , metal assisted chemical etching , polyimide packaging , Si nanowires , Thermoelectric devices ] -
Si/Ge/Si Photodetector by Rapid-Melting-Growth Technique
IEEE Transactions on Nanotechnology, 17, 3, 607-610, 2018-05-01
[ Ge , PIN photodetector , rapid-melting-growth ] -
Electron-beam-induced phase transition in the transmission electron microscope: The case of VO2(B)
CrystEngComm, 20, 43, 6857-6860, 2018-01-01 -
Suppressed Umklapp scattering of β-FeSi2 thin film and single crystalline nanowires
Nanotechnology, 28, 48, 2017-11-06
[ nanowire , silicide , thermal conductivity , Umklapp scattering , β-FeSi 2 ] -
Observing the evolution of graphene layers at high current density
Nano Research, 9, 12, 3663-3670, 2016-12-01
[ breakdown , graphene , high current density , in-situ transmission electron microscope (TEM) , Ostwald ripening ] -
Anisotropy of Seebeck coefficient in Si/Ge composite quantum dots
Applied Physics Letters, 109, 8, 2016-08-22 -
Barrier property of a Ta/MnSixOy Layer formed by a ta-mn alloy for a cu interconnect
IEEE Electron Device Letters, 37, 8, 1048-1050, 2016-08-01
[ Cu interconnect , diffusion barrier , reliability , TaMn ] -
Epitaxial nickel disilicide with low resistivity and excellent reliability
Nanotechnology, 27, 6, 2016-01-12
[ epitaxial , NiSi 2 , reliability , silicide , TEM ] -
Epitaxial silicides: The case of Fe, Ni, and Ti
CrystEngComm, 18, 42, 8155-8158, 2016-01-01 -
Self-Passivation of Defects: Effects of High-Energy Particle Irradiation on the Elastic Modulus of Multilayer Graphene
Advanced Materials, 27, 43, 6841-6847, 2015-11-18
[ defects , elastic modulus , graphene , interlayer linking , irradiation ] -
Atomic Visualization of the Phase Transition in Highly Strained BiFeO3 Thin Films with Excellent Pyroelectric Response
Nano Energy, 17, 72-81, 2015-10-01
[ BiFeO 3 , In-situ HRTEM , MPB , Pyroelectric response , Reversible phase transition ] -
The Discovery of Plasmon Resonance in Germanide Nanowires Grown on Cu Foil
IEEE Transactions on Nanotechnology, 14, 4, 608-611, 2015-07-01
[ copper germanide , Cu Ge 3 , LSPR , nanowires , NWs , plasmon ] -
Ge photodetector monolithically integrated on si by rapid-melting-growth technique
IEEE Photonics Technology Letters, 27, 12, 1254-1256, 2015-06-15
[ GE , PIN photodetector , Rapid-melting-growth ] -
Direct observation of sublimation behaviors in one-dimensional In2Se3/In2O3 nanoheterostructures
Analytical Chemistry, 87, 11, 5584-5588, 2015-06-02 -
Electronic Structure and Infrared Light Emission in Dislocation-Engineered Silicon
IEEE Transactions on Nanotechnology, 14, 3, 399-403, 2015-05-01
[ Density of state , dislocation array , first-principles calculations , network , photoluminescence , tunneling current ] -
Power conversion of hybrid Bi2Te3/si thermoelectric nanocomposites
Nano Energy, 11, 647-653, 2015-01-01
[ Bi Te 2 3 , Nanocomposite , Nanowire , Power conversion , Thermoelectric ] -
A novel silicide and germanosilicide by NiCo alloy for Si and SiGe source/drain contact with improved thermal stability
CrystEngComm, 16, 48, 10933-10936, 2014-12-28 -
Structural, electrical, and optical properties of faceted In 2O3 nanostructures
IEEE Transactions on Nanotechnology, 13, 2, 172-175, 2014-03-01
[ Electrical , Facet , In O 2 3 , Nanorod , Photoluminescence , Transmission electron microscope (TEM) , Vapor-liquid- solid (VLS) , Vapor-solid (VS) ] -
Shape control of nickel silicide nanocrystals on stress-modified surface
CrystEngComm, 16, 9, 1611-1614, 2014-01-01 -
Wavelength-position correspondent plasmon resonance of planar Au/In 2O3 bilayered nanostructures on quartz
, 104, 8, 2014-01-01 -
Measurement of interlayer screening length of layered graphene by plasmonic nanostructure resonances
Journal of Physical Chemistry C, 117, 43, 22211-22217, 2013-10-31 -
Dynamic evolution of conducting nanofilament in resistive switching memories
Nano Letters, 13, 8, 3671-3677, 2013-08-14
[ In situ TEM , nanofilament , redox , resistive switching , RRAM , unipolar ] -
Phase transformation and thermoelectric properties of bismuth-telluride nanowires
Nanoscale, 5, 11, 4669-4672, 2013-06-07 -
Copper silicide/silicon nanowire heterostructures: In situ TEM observation of growth behaviors and electron transport properties
Nanoscale, 5, 11, 5086-5092, 2013-06-07 -
In situ TEM and energy dispersion spectrometer analysis of chemical composition change in ZnO nanowire resistive memories
Analytical Chemistry, 85, 8, 3955-3960, 2013-04-16 -
Single-crystalline δ-Ni2Si nanowires with excellent physical properties
Nanoscale Research Letters, 8, 1, 1-5, 2013-01-01
[ CVD , Ferromagnetic characteristic , Field emission ] -
Directed assembly of nano-scale phase variants in highly strained BiFeO 3 thin films
, 112, 6, 2012-09-15 -
Direct observation of melting behaviors at the nanoscale under electron beam and heat to form hollow nanostructures
Nanoscale, 4, 15, 4702-4706, 2012-08-07 -
Single-crystalline Ge nanowires and Cu 3Ge/Ge nano-heterostructures
CrystEngComm, 14, 14, 4570-4574, 2012-07-21 -
Growth and properties of single-crystalline Ge nanowires and germanide/Ge nano-heterostructures
CrystEngComm, 14, 1, 53-58, 2012-01-07 -
Well-aligned ZnO nanowires with excellent field emission and photocatalytic properties!
Nanoscale, 2012, 5, 1471-1475, 2012-01-01 -
Growth of CuInSe2 and In2Se3/CuInSe 2 nano-heterostructures through solid state reactions
Nano Letters, 11, 10, 4348-4351, 2011-10-12
[ CuInSe 2 , in situ TEM , In Se 2 3 , nano-heterostructures , solid state reactions ] -
Growth of single-crystalline cobalt silicide nanowires with excellent physical properties
, 110, 7, 2011-10-01 -
Controlled growth of the silicide nanostructures on Si bicrystal nanotemplate at a precision of a few nanometres
CrystEngComm, 13, 12, 3967-3970, 2011-06-21 -
Cobalt silicide nanocables grown on Co films: Synthesis and physical properties
Nanotechnology, 21, 48, 2010-12-03 -
Formation of In2 O3 nanorings on Si substrates
, 97, 18, 2010-11-01 -
Elastic properties and buckling of silicon nanowires
Advanced Materials, 20, 20, 3919-3923, 2008-10-17 -
Er-doped silicon nanowires with 1.54 μm light-emitting and enhanced electrical and field emission properties
, 91, 9, 2007-09-07 -
Lateral self-aligned p-type in 2O 3 nanowire arrays epitaxially grown on Si substrates
Nano Letters, 7, 6, 1799-1803, 2007-06-01 -
Piezoelectric gated diode of a single ZnO nanowire
Advanced Materials, 19, 6, 781-784, 2007-03-19 -
Modulation of photoemission spectra of In 2O 3 nanowires by the variation in Zn doping level
, 88, 6, 2006-02-01 -
Beaklike SnO2 nanorods with strong photoluminescent and field-emission properties
Small, 2, 1, 116-120, 2006-01-01
[ Electron microscopy , Field emission , Nanorods , Phototuminescence , Tin oxide ] -
Formation and evolution of self-assembled crystalline Si nanorings on (001) Si mediated by Au nanodots
, 87, 22, 1-3, 2005-11-30 -
Synthesis of Si-Ge oxide nanowires via the transformation of Si-Ge thin films with self-assembled Au catalysts
Electrochemical and Solid-State Letters, 8, 10, 2005-10-07
研討會著作
-
Effect of Si bicrystal on the formation of nano-scaled silicides
83-88, 2007-12-01
-
Self-assembled Si-Ge nanorings with size and composition-control
236-239, 2006-01-01
-
Growth of In 2 O 3 nanocrystal chains by a vapor transport and condensation method
101-106, 2005-05-15
[ Indium oxide , Nanocrystal chains , Nanowires ]
校內獲獎
- 114 論文進步獎
- 102 新進教師補助
- 多孔性材料及其製作方法 [中華民國]
- 擴散阻礙結構 [中華民國]
- 可降低電阻值之半導體元件 [中華民國]
- 利用表面電漿共振效應之太陽能電池 [中華民國]
- 微溝渠熱電材料形成方法 Method for preparing thermoelectric material with a nanotrough [中華民國]
- 具有矽鍺磊晶之基板之製造方法 Manufacturing method for forming substrate with silicon-germanium epitaxtal layer [中華民國]
國立中央大學