期刊著作

• Fabrication of a Three-Dimensional Microfluidic System from Poly(methyl methacrylate) (PMMA) Using an Intermiscibility Vacuum Bonding Technique
  Micromachines, 15, 4, 2024-04-01
  [ digital photoelasticity analysis,intermiscibility bonding technique,microfluidic chip fabrication,PMMA bonding,solvent miscibility ]

• Low-temperature rough-surface wafer bonding with aluminum nitride ceramics implemented by capillary and oxidation actions
  Ceramics International, 48, 6, 8766-8772, 2022-03-15

• Surface activation of poly(methyl methacrylate) for microfluidic device bonding through a H2O plasma treatment linked with a low-temperature annealing
  Journal of Micromechanics and Microengineering, 31, 5, 2021-05-01
  [ Bonding,H2O plasma linked with RTA treatment,Microfluidic device,PMMA ]

• Fusion bonding of copper and silicon at -70 °C by electrochemistry
  Acta Materialia, 204, 2021-02-01

• Utilization of low wavelength laser linking with electrochemical etching to produce nano-scale porous layer on p-type silicon wafer with high luminous flux
  ECS Journal of Solid State Science and Technology, 10, 1, 2021-01-01

• Forming a photoluminescent layer on another surface in the dark through lasering of N-type silicon in an electrolyte
  ACS Omega, 5, 41, 26497-26503, 2020-10-20

• Photoluminescent or blackened silicon surfaces synthesized with copper-assisted chemical etching: For energy applications
  ECS Journal of Solid State Science and Technology, 9, 2, 2020-01-17

• Annihilating Pores in the Desired Layer of a Porous Silicon Bilayer with Different Porosities for Layer Transfer
  Scientific Reports, 9, 1, 2019-12-01

• A fully encapsulated piezoelectric-triboelectric hybrid nanogenerator for energy harvesting from biomechanical and environmental sources
  Express Polymer Letters, 13, 6, 533-542, 2019-06-01
  [ Nanomaterials , NFES , NMF , PTHG , PVDF ]

• Near-field electrospun piezoelectric fibers as sound-sensing elements
  Polymers, 10, 7, 2018-06-21
  [ Electrospun , Near-field , Piezoelectric fibers ]

• Rapid Fabrication of 100 nm or Thinner Fully Depleted Silicon-on-Insulator Materials for Ultralow Energy Consumption
  ACS Applied Nano Materials, 1, 5, 2414-2420, 2018-05-25
  [ FD-SOI , hydrogen enhancement , ion-cut process , layer transfer , solid-phase epitaxial-growth process , ultralow energy consumption ]

• Communication—effect of free-carrier absorption on an anodized silicon surface for producing dense and uniform nanocrystals
  Journal of the Electrochemical Society, 165, 3, H99-H101, 2018-01-01
  [ Porous Silicon,Photoluminescence,Nanocrystal ]

• Nanoscale layer transfer by hydrogen ion-cut processing: A brief review through recent U.S. patents
  Recent Patents on Nanotechnology, 11, 1, 1-8, 2017-01-01
  [ Hydrogen ion implantation , Ion-cut process , Layer splitting , Layer transfer , Nanomembrane , Silicon on insulator , Wafer bonding ]

• Communication—eliminating thickness measurement uncertainty of capacitive displacement sensor in high resistivity substrate by photoconduction
  ECS Journal of Solid State Science and Technology, 6, 5, P323-P325, 2017-01-01

• Inhibition effect of a laser on thickness increase of p-type porous silicon in electrochemical anodizing
  Journal of the Electrochemical Society, 163, 5, H265-H268, 2016-01-01

• Sharpening Si nanocrystals on the bulk surface by nanoscale electrochemistry through controlling the hole current with the irradiation of near-infrared laser
  Journal of the Electrochemical Society, 163, 9, E258-E262, 2016-01-01

• Modeling a thermionic energy converter using finite-difference time-domain particle-in-cell simulations
  , 21, 2, 2014-02-01

• Increasing more bonding energy in nitrogen plasma-activated wafer bonding by HF-dip
  ECS Electrochemistry Letters, 3, 8, 2014-01-01

• Increasing more bonding energy in nitrogen plasma-activated wafer bonding by HF-Dip
  ECS Solid State Letters, 3, 8, 2014-01-01

• Effect of microwave processing on oxygen plasma-assisted bonding enabling rapid layer transfer
  ECS Solid State Letters, 3, 1, 2014-01-01

• HF/H2 O2 etching for removal of damage layer on as-transferred Si layer formed by ion-cut process
  Electrochemical and Solid-State Letters, 13, 7, 2010-09-07

• Low stress silicon layer transfer onto quartz through hydrogen capture within Si (B/Ge) Buried Layer
  Electrochemical and Solid-State Letters, 12, 12, 2009-10-22

• Oxidation behavior of various metallic alloys for solid oxide fuel cell interconnect
  Journal of Fuel Cell Science and Technology, 6, 3, 0310131-0310136, 2009-08-01
  [ Interconnect , Oxide scal , Solid oxide fuel cell (SOFC) ]

• Performance evaluation of LSM-metallic interconnect composite films prepared by plasma sputtering method
  Materials Science and Technology, 25, 5, 582-586, 2009-05-01
  [ Fe-Cr alloy , Interconnect , Solid oxide fuel cell (SOFC) ]

• Oxidation behavior of metallic interconnect coated with La-Sr-Mn film by screen painting and plasma sputtering
  International Journal of Hydrogen Energy, 34, 1, 422-434, 2009-01-01
  [ Interconnect , Plasma-sputtering coating , Screen painting , Solid oxide fuel cell (SOFC) ]

• Nanoscale thick layer transfer of hydrogen-implanted wafer by using polycrystalline silicon sacrificial layer
  , 91, 20, 2007-11-23

• Fabrication of a nanoscale single-crystalline silicon thin film on insulator
  Electrochemical and Solid-State Letters, 10, 7, 2007-05-21

• Ammonium hydroxide effect on low-temperature wafer bonding energy enhancement
  Electrochemical and Solid-State Letters, 8, 3, 2005-04-07

• Wafer bonding for microsystems technologies
  Sensors and Actuators, A: Physical, 74, 1, 161-168, 1999-04-20

• Onset of blistering in hydrogen-implanted silicon
  , 74, 7, 982-984, 1999-02-15

• Fundamental issues in wafer bonding
  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 17, 4, 1145-1152, 1999-01-01

• A "smarter-cut" approach to low temperature silicon layer transfer
  , 72, 1, 49-51, 1998-12-01

• Si and SiC layer transfer by high temperature hydrogen implantation and lower temperature layer splitting
  Electronics Letters, 34, 4, 407-408, 1998-02-19

• Low vacuum wafer bonding
  Electrochemical and Solid-State Letters, 1, 1, 52-53, 1998-01-01

• Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates
  , 70, 11, 1390-1392, 1997-03-17

• The role of surface chemistry in bonding of standard silicon wafers
  Journal of the Electrochemical Society, 144, 1, 384-389, 1997-01-01

• Fabrication of single crystalline SiC layer on high temperature glass
  Journal of the Electrochemical Society, 144, 5, 1997-01-01

研討會著作

• Electrochemical Weakening Material Strength for Accelerated Thinning of Silicon Carbide Substrates
  2024-05-29
  [ silicon carbide,electrochemical etching ]

• Low-Temperature Anodization: An Electrochemical Route to Tailored Nanostructures in Heavily Doped p-Type Silicon for Forming Quantum Dots
  2024-05-29
  [ porous silicon,quantum dots,low temperature anodization ]

• Low Temperature Wafer Bonding of Silicon Carbide/Aluminum Nitride
  2023-05-30
  [ wafer bonding, aluminum nitride, silicon carbide, plasma activation ]

• Low-Temperature Rough-Surface Wafer Bonding with AlN/AlN Via Oxygen Plasma Activation
  49-50, 2022-01-01
  

• Measurement of thickness of high-resistivity substrate by photoconduction enhanced capacitance displacement sensor
  1747-1752, 2017-01-01
  [ ]

• Free-carrier absorption assisted photoelectrochemistry of silicon
  1113-1125, 2017-01-01
  [ ]

• The suppression effect of 830 nm laser irradiation on porous silicon formation
  1-7, 2015-01-01
  [ ]

• Enhancement of bonding strength for low temperature Si3N4/Si3N4 direct wafer bonding by nitrogen-plasma activation and hydrofluoric pre-dip
  111-117, 2014-01-01
  [ ]

• Layer transfer of hydrogen-implanted silicon wafers by thermal-microwave co-activation
  111-116, 2006-01-01
  [ ]

• Nanothick layer transfer of hydrogen-implanted wafer using polysilicon sacrificial layer
  84-89, 2006-01-01
  [ ]

• A nano-thick SOI fabrication method
  431-438, 2005-12-01
  [ ]

• Thermal-microwave hybrid SOI materials technology
  414-423, 2005-12-01
  [ ]