國立中央大學教師履歷平台

期刊著作

• A Ka-Band 1024-QAM CMOS I/Q Modulator Using a 15th-Order Cascaded Subharmonically Injection-Locked Frequency Multiplier Chain With FTL
  IEEE Transactions on Microwave Theory and Techniques, 73, 1, 102-117, 2025-01-01
  [ CMOS,frequency-tracking loop (FTL),in-phase and quadrature (I/Q) modulator,injection locked,microwave,millimeter wave (mm-wave),quadrature amplitude modulation (QAM),RFIC ]

• A Q-Band Ultralow-Jitter Subharmonically Injection-Locked Frequency Quadrupler WithFTL and Switched-Capacitor Array
  IEEE Microwave and Wireless Technology Letters, 35, 6, 864-867, 2025-01-01
  [ CMOS,frequency multiplier,frequency-tracking loop (FTL),injection-locked,low jitter,low phase noise,millimeter-wave (mm-wave),radio frequency integrated circuit (RFIC),switched-capacitor array (SCA) ]

• A V-Band Divide-by-6 Injection-Locked Frequency Divider Using Current-Reused Topology With Second Injection and Harmonic Boosting
  IEEE Microwave and Wireless Technology Letters, 35, 6, 702-705, 2025-01-01
  [ CMOS,injection-locked frequency divider (ILFD),millimeter wave (mm-wave),oscillator,phase-locked loop (PLL),radio frequency integrated circuit (RFIC),V-band,wide locking range (LR) ]

• Low-Phase-Noise and Low-Jitter Signal Generation Techniques for 5G/6G and Quantum Computing Applications
  IEEE Microwave Magazine, 26, 12, 76-98, 2025-01-01

• Design and Analysis of a V-Band CMOS Sextuple SILVCO Using Transformer and Cascade-Series Coupling With a Frequency-Tracking Loop
  IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 14, 1, 75-87, 2024-03-01
  [ CMOS,frequency multiplier,frequency-locked loop,low phase noise,millimeter-wave,RFIC,voltage-controlled oscillator ]

• A Ka-Band Low-EVM Subharmonically Injection-Locked FLL IQ Modulator Using Stacked-Boosting and Dual-Injection Technique
  IEEE Microwave and Wireless Technology Letters, 33, 3, 287-290, 2023-03-01
  [ CMOS,digital modulation,injection lock,Ka-band,microwave,millimeter-wave (mm-wave),quadrature voltage-controlled oscillator (QVCO) ]

• A 38-40 GHz High-speed 2n-QAM Modulator using Sub-harmonically Injection-locked Quadrature FLL
  IEEE Microwave and Wireless Components Letters, 2021-01-01
  [ CMOS,FLL,Frequency locked loops,Frequency measurement,Frequency modulation,injection-locked,millimeter-wave,Modulation,OFDM,Phase noise,quadrature amplitude modulator,RFIC,Voltage measurement ]

• A V-Band CMOS Low-DC-Power Wide-Locking-Range Divide-by-6 Injection-Locked Frequency Divider Using Transformer Coupling
  IEEE Microwave and Wireless Components Letters, 30, 6, 593-596, 2020-06-01
  [ CMOS , high speed , injection-locked frequency divider (ILFD) , microwave and millimeter-wave (MMW) , radio frequency integrated circuit (RFIC)/monolithic microwave integrated circuit (MMIC) , V-band ]

• Design and analysis of monolithic triple-stacked power amplifiers using GaAs HBT-HEMT process
  IEICE Electronics Express, 17, 13, 2020-01-01
  [ GaAs,Heterojunction bipolar transistor (HBT),High electron-mobility transistor (HEMT),Microwave circuits,Monolithic microwave integrated circuit (MMIC),Power amplifier (PA) ]

• Design and analysis of 0.5-ft bandwidth thas with resolution enhancement techniques in 0.18-μm sige process
  IEEE Access, 7, 33024-33037, 2019-01-01
  [ Cmos/sige rfic , High-speed analog ic design , Microwave integrated circuits (ics) , Mixed signal design , Sampling circuits ]

• Design and Analysis of CMOS Low-Phase-Noise Low Quadrature Error v -Band Subharmonically Injection-Locked Quadrature FLL
  IEEE Transactions on Microwave Theory and Techniques, 66, 6, 2851-2866, 2018-06-01
  [ CMOS , frequency-locked loop (FLL) , low-phase-noise oscillators , millimeter-wave circuits , quadrature modulation , RFIC/ monolithic microwave integrated circuit design , voltage-controlled oscillator (VCO) ]

• DC-16 GHz GaAs track-And-hold amplifier using sampling rate and linearity enhancement techniques
  Electronics Letters, 54, 2, 83-85, 2018-01-25

• A V-band 90-nm CMOS Divide-by-10 Injection-Locked Frequency Divider Using Current-Reused Topology
  IEEE Microwave and Wireless Components Letters, 28, 1, 76-78, 2018-01-01
  [ CMOS , current-mode logic , high speed , injection-locked frequency divider (ILFD) , microwave and millimeter-wave (MMW) , V-band. ]

• A K -Band High Efficiency High Power Monolithic GaAs Power Oscillator Using Class-E Network
  IEEE Microwave and Wireless Components Letters, 27, 1, 55-57, 2017-01-01
  [ GaAs , high efficiency , low phase noise oscillators , MMIC , PHEMT ]

• Design and analysis of CMOS low-phase-noise low-jitter subharmonically injection-locked VCO with FLL self-alignment technique
  IEEE Transactions on Microwave Theory and Techniques, 64, 12, 4632-4645, 2016-12-01
  [ CMOS , frequency-locked loop (FLL) , low-phase-noise oscillators , microwave and millimeter-wave (mm-wave) circuits , voltage-controlled oscillator (VCO) ]

• A Broadband Bidirectional Amplifier Using Gm-Bandwidth Extension Technique
  IEEE Microwave and Wireless Components Letters, 26, 6, 449-451, 2016-06-01
  [ Bidirectional , distributed , GaAs , HEMT ]

• A 2.5 GHz High Efficiency High Power Low Phase Noise Monolithic Microwave Power Oscillator
  IEEE Microwave and Wireless Components Letters, 25, 11, 730-732, 2015-11-01
  [ GaAs , high efficiency power amplifiers , low phase noise oscillators , MMIC , pHEMT ]

• Design and Analysis of CMOS High-Speed High Dynamic-Range Track-and-Hold Amplifiers
  IEEE Transactions on Microwave Theory and Techniques, 63, 9, 2841-2853, 2015-09-01
  [ CMOS , high-speed analog CMOS design , RF and mixed-signal integrated circuit (IC) design , RF front ends , sampling circuits ]

• Design and analysis of a K-band low-phase-noise phase-locked loop with subharmonically injection-locked technique
  IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 61, 12, 1927-1937, 2014-12-01

• 2.8 dB conversion gain broadband HBT-HEMT balanced frequency tripler with high harmonic suppression
  Electronics Letters, 50, 11, 812-814, 2014-05-22

• A new monolithic ka-band filter-based voltage-controlled oscillator using 0.15 μm GaAs pHEMT technology
  IEEE Microwave and Wireless Components Letters, 24, 2, 111-113, 2014-02-01
  [ Combline filter , filter-based microwave oscillator , GaAs , monolithic microwave integrated circuit (MMIC) , pHEMT , voltage-controlled oscillator (VCO) ]

• A Ka-Band monolithic bidirectional Up-down converter for high-speed applications
  IEEE Transactions on Microwave Theory and Techniques, 62, 3, 610-622, 2014-01-01
  [ Distributed amplifiers , GaAs , HEMT , monolithic microwave integrated circuit (MMIC) , RF front ends ]

• A low-jitter low-phase-noise 10-GHz sub-harmonically injection-locked PLL with self-aligned DLL in 65-nm CMOS technology
  IEEE Transactions on Microwave Theory and Techniques, 62, 3, 543-555, 2014-01-01
  [ CMOS , low-phase-noise oscillator , phase noise , phase-locked loop (PLL) , voltage-controlled oscillator (VCO) ]

• A broadband inductorless active power divider for 10 Gbps high speed transmissions
  IEEE Microwave and Wireless Components Letters, 24, 3, 197-199, 2014-01-01
  [ Active power divider , Darlington cell ]

• Design and Analysis of a $Ka$-Band Monolithic High-Efficiency Frequency Quadrupler Using GaAs HBT-HEMT Common-Base/Common-Source Balanced Topology
  IEEE Transactions on Microwave Theory and Techniques, 61, 10, 3674-3689, 2013-08-26
  [ Frequency conversion , GaAs , heterojunction bipolar transistor (HBT) , high electron-mobility transistor (HEMT) , microwave circuits , monolithic microwave integrated circuit (MMIC) , multipliers ]

• 65-nm CMOS dual-gate device for Ka-band broadband low-noise amplifier and high-accuracy quadrature voltage-controlled oscillator
  IEEE Transactions on Microwave Theory and Techniques, 61, 6, 2402-2413, 2013-05-15
  [ CMOS , low-noise amplifiers (LNAs) , microwave and millimeter-wave (MMW) integrated circuits (ICs) , RF integrated circuit (RFIC) , voltage-controlled oscillator (VCO) ]

• A W -Band wide locking range and low dc power injection-locked frequency tripler using transformer coupled technique
  IEEE Transactions on Microwave Theory and Techniques, 61, 2, 860-870, 2013-01-14
  [ CMOS , frequency multipliers , microwave and millimeter-wave (MMW) oscillators , MMW silicon RF integrated circuits (RFICs) ]

• A low-phase-noise CMOS quadrature voltage-controlled oscillator using a self-injection-coupled technique
  IEEE Transactions on Circuits and Systems II: Express Briefs, 59, 10, 623-627, 2012-09-21
  [ CMOS , parallel-coupled quadrature voltage-controlled oscillator (QVCO) (P-QVCO) , phase noise , self-injection-coupled (SIC) QVCO (SIC-QVCO) ]

• A broadband injection-locking class-E power amplifier
  IEEE Transactions on Microwave Theory and Techniques, 60, 10, 3232-3242, 2012-09-10
  [ Class-E power amplifier (PA) , GaAs PHEMT , monolithic microwave integrated circuit (MMIC) , RF/microwaves , stability analysis ]

• A monolithic 3.5-to-6.5 GHz GaAs HBT-HEMT/common-emitter and common-gate stacked power amplifier
  IEEE Microwave and Wireless Components Letters, 22, 9, 474-476, 2012-08-15
  [ GaAs , HBT , HEMT , microwave , power amplifier (PA) ]

• Design and analysis of a w-band divide-by-three injection-locked frequency divider using second harmonic enhancement technique
  IEEE Transactions on Microwave Theory and Techniques, 60, 6 PART 1, 1617-1625, 2012-04-05
  [ CMOS , divide-by-three , injection-locked frequency divider (ILFD) , phase-locked loop (PLL) ]

• K -band CMOS differential and quadrature voltage-controlled oscillators for low phase-noise and low-power applications
  IEEE Transactions on Microwave Theory and Techniques, 60, 1, 46-59, 2012-01-01
  [ CMOS , low-power RF integrated circuit (RFIC) design , microwave oscillators , phase noise , voltage-controlled oscillator (VCO) ]

• Gain-bandwidth analysis of broadband darlington amplifiers in HBT-HEMT process
  IEEE Transactions on Microwave Theory and Techniques, 60, 11, 3458-3473, 2012-01-01
  [ Amplifier , GaAs , Heterojunction bipolar transistor (HBT) , High electron-mobility transistor (HEMT) , Monolithic microwave integrated circuit (MMIC) ]

• Design and analysis of a 77.3% locking-range divide-by-4 frequency divider
  IEEE Transactions on Microwave Theory and Techniques, 59, 10 PART 1, 2477-2485, 2011-08-04
  [ CMOS , current mode logic (CML) latch , divide-by-4 (D4) , injection-locked frequency divider (ILFD) , monolithic microwave integrated circuit (MMIC) , phase-locked loop (PLL) , wide locking range ]

• Design and analysis of a DC-43.5-GHz fully integrated distributed amplifier using GaAs HEMT-HBT cascode gain stage
  IEEE Transactions on Microwave Theory and Techniques, 59, 2, 443-455, 2011-02-01
  [ Distributed amplifier (DA) , enhancement- and depletion-mode (E/D-mode) high electron-mobility transistor (HEMT) , heterojunction bipolar transistor (HBT) , microwave , monolithic microwave integrated circuit (MMIC) ]

• 0.5-6 GHz low-voltage low-power mixer using a modified cascode topology in 0.18 μm CMOS technology
  IET Microwaves, Antennas and Propagation, 5, 2, 167-174, 2011-01-31

• A 0.18-μm dual-gate CMOS device modeling and applications for RF cascode circuits
  IEEE Transactions on Microwave Theory and Techniques, 59, 1, 116-124, 2011-01-01
  [ BSIM , CMOS , dual gate , low-noise amplifier (LNA) , mixer , modeling ]

• A high efficiency broadband class-E power amplifier using a reactance compensation technique
  IEEE Microwave and Wireless Components Letters, 20, 9, 507-509, 2010-09-01
  [ Enhancement/depletion pseudomorphic high electron mobility transistor (E/D-PHEMT) , high efficiency , power amplifier (PA) , reactance compensation ]

• A broadband high efficiency high output power frequency doubler
  IEEE Microwave and Wireless Components Letters, 20, 4, 226-228, 2010-04-01
  [ Broadband , Distributed , Enhancement-mode (E-Mode) , Frequency doubler , PHEMT ]

• A low loss high isolation DC-60 GHz SPDT traveling-wave switch with a body bias technique in 90 nm CMOS process
  IEEE Microwave and Wireless Components Letters, 20, 2, 82-84, 2010-02-01
  [ CMOS , Microwave , Millimeter-wave , Switch , Traveling wave ]

• A DC-21 GHz low imbalance active balun using darlington cell technique for high speed data communications
  IEEE Microwave and Wireless Components Letters, 19, 11, 728-730, 2009-11-01
  [ Active balun , Darlington cell , Heterojunction bipolar transistor (HBT) , Microwave , MMIC ]

• An 8692 GHz frequency shift keying transmitter with an integrated antenna in 0.5 E/D-PHEMT technology
  IEEE Microwave and Wireless Components Letters, 19, 11, 749-751, 2009-11-01
  [ Antenna , Enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT) , Frequency shift keying (FSK) , Millimeter-wave (MMW) , W-band. ]

• A 38% tuning bandwidth low phase noise differential voltage controlled oscillator using a 0.5 μ e/d-phemt process
  IEEE Microwave and Wireless Components Letters, 19, 7, 467-469, 2009-07-01
  [ Enhancement/depletion-pseudomorphic high- electron mobility transistor (E/D-PHEMT) , Low phase noise , Voltage controlled oscillator (VCO) ]

• A 30-50 GHz wide modulation bandwidth bidirectional BPSK demodulator/ modulator with low LO power
  IEEE Microwave and Wireless Components Letters, 19, 5, 332-334, 2009-05-01
  [ Bidirectional , Binary phase shift keying (BPSK) , Demodulator , Modulator ]

• A 98/196 GHz low phase noise voltage controlled oscillator with a mode selector using a 90 nm CMOS process
  IEEE Microwave and Wireless Components Letters, 19, 3, 170-172, 2009-03-01
  [ CMOS , G-band , Low phase noise , Millimeter-wave (MMW) , Voltage controlled oscillator (VCO) , W-band ]

• Design of broadband highly linear IQ modulator using a 0.5 μm E/D-PHEMT process for millimeter-wave applications
  IEEE Microwave and Wireless Components Letters, 18, 7, 491-493, 2008-07-01
  [ Enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT) , Millimeter-wave (MMW) , Quadrature amplitude modulator (QAM) ]

• A new linearization technique for CMOS RF mixer using third-order transconductance cancellation
  IEEE Microwave and Wireless Components Letters, 18, 5, 350-352, 2008-05-01
  [ CMOS , Harmonic , Intermodulation , Linearization , Mixer , Third-order intermodulation (IMD3) , Third-order transconductance ]

• A 30 - 130 GHz ultra broadband direct-conversion BPSK modulator using a 0.5-μm E/D-PHEMT process
  IEEE Microwave and Wireless Components Letters, 17, 11, 805-807, 2007-11-01
  [ Binary phase shift keying (BPSK) , Broadband , D-band , Enhancement mode , Enhancement/depletion- pseudomorphic high-electron mobility transistor (E/D-PHEMT) , Millimeter-wave (MMW) , Modulator ]

• A 46-GHz direct wide modulation bandwidth ASK modulator in 0.13-μm CMOS technology
  IEEE Microwave and Wireless Components Letters, 17, 9, 691-693, 2007-09-01
  [ Amplitude shift keying (ASK) , CMOS , Direct conversion , Millimeter wave , Modulator , Voltage controlled oscillator (VCO) ]

• A 0.5-7.5 GHz ultra low-voltage low-power mixer using bulk-injection method by 0.18-μm CMOS technology
  IEEE Microwave and Wireless Components Letters, 17, 7, 531-533, 2007-07-01
  [ Broadband , CMOS , Low-power , Low-voltage , Mixer ]

• Analysis of multiconductor coupled-line marchand baluns for miniature MMIC design
  IEEE Transactions on Microwave Theory and Techniques, 55, 6, 1190-1198, 2007-06-01
  [ Balun,Diode,Frequency doubler,Marchand balun,Monolithic microwave integrated circuit (MMIC) ]

• Design and Analysis of a 44-GHz MMIC Low-Loss Built-in Linearizer for High-Linearity Medium Power Amplifiers
  IEEE Transactions on Microwave Theory and Techniques, 54, 6, 2487-2496, 2006-06-06
  [ Linearizer , millimeter-wave (MMW) , monolithic microwave integrated circuit (MMIC) , nonlinear , power amplifier (PA) ]

• A 9-50-GHz Gilbert-cell down-conversion mixer in 0.13-μm CMOS technology
  IEEE Microwave and Wireless Components Letters, 16, 5, 293-295, 2006-05-01
  [ Active mixer , Complementary metal oxide semi-conductor (CMOS) , Gilbert cell , Microwave monolithic integrated circuit (MMIC) , Wideband ]

• FET-integrated CPW and the application in filter synthesis design method on traveling-wave switch above 100 GHz
  IEEE Transactions on Microwave Theory and Techniques, 54, 5, 2090-2096, 2006-05-01

• A 22-GHz push-push CMOS oscillator using micromachined inductors
  IEEE Microwave and Wireless Components Letters, 15, 12, 859-861, 2005-12-01
  [ Micromachined inductors , Voltage-controlled oscillators (VCOs) ]

• Millimeter-wave MMIC passive HEMT switches using traveling-wave concept
  IEEE Transactions on Microwave Theory and Techniques, 52, 8 I, 1798-1808, 2004-08-01
  [ High electron-mobility transistor (HEMT) , Switch , Traveling wave ]

• Broad-band HBT BPSK and IQ modulator MMICs and millimeter-wave vector signal characterization
  IEEE Transactions on Microwave Theory and Techniques, 52, 3, 908-919, 2004-03-01
  [ Binary phase-shift keying (BPSK) , Cold-mode HBT model , HBT , In-phase and quadrature (IQ) , Millimeter wave , Modulator , Monolithic microwave integrated circuit (MMIC) ]

• A 77-GHz MMIC power amplifier for automotive radar applications
  IEEE Microwave and Wireless Components Letters, 13, 4, 143-145, 2003-04-01
  [ Millimeter wave , MMIC , PHEMT , Power amplifier ]

研討會著作

• A K-Band CMOS High-gain Power Amplifier Using Transformer-feedback Cascode Topology
  2025-01-01
  [ CMOS,millimeter-wave (mm-wave),power amplifier (PA),RFIC,transformer feedback ]

• A Two-stage Ka-band Transformer-feedback Low-Noise Amplifier in 90-nm CMOS Technology
  4-7, 2025-01-01
  [ CMOS,low-noise amplifier (LNA),millimeter-Ka-band,transformer ]

• A 22-34 GHz CMOS Neutralization-Based Direct-Conversion I/Q UpConverter for 1024-QAM Modulation
  435-438, 2025-01-01
  [ 5G communication,broadband,CMOS,millimeter-wave,power amplifier (PA),quadrature amplitude modulation (QAM),RFIC,transmitter,up-converter ]

• An X-Band 35-dBm Compact Continuous-Mode Class-J Power Amplifier in 0.25-μm GaN Process
  460-463, 2025-01-01
  [ Class-J,GaN,high efficiency,high power,microwave,millimeter-wave (mm-wave),MMIC,power amplifier ]

• A Ka-Band Low-Phase-Noise Phase-locked Loop with Reconfigurable Output Network for Fundamental and Push-Push Modes
  2024-01-01
  [ Class-E,CMOS,high output power,low phase noise,millimeter-wave (mm-wave),PLL,push-push,reconfigurable,RFIC ]

• A 23-30 GHz Low-Phase-Noise 5-Bit Voltage-Controlled Oscillator in 90-nm CMOS Process
  79-82, 2024-01-01
  [ CMOS,low phase noise,microwave,millimeter-wave,RFIC,voltage-controlled oscillator (VCO),wide tuning range ]

• Design of a Six-stage W-band Low-Noise Amplifier Using a 90-nm CMOS Technology
  106-109, 2024-01-01
  [ CMOS,low noise amplifier (LNA),millimeter-wave,RFIC,W-band ]

• A Ka-Band 256-QAM Ninefold Sub-Harmonically Injection-Locked CMOS I/Q Modulator Using Pulsed Oscillator
  50-53, 2024-01-01
  [ CMOS,frequency-locked loop (FLL),injection-locked,millimeter-wave (mm-wave),pulsed oscillator (P-OSC),quadrature amplitude modulation (QAM),RFIC ]

• A Ka-Band Low Noise Amplifier Using R-L-C Feedback Technique in E-Mode 0.15-μm GaAs pHEMT Process
  1165-1167, 2024-01-01
  [ GaAs,Ka-band,low noise amplifier (LNA),millimeter-wave,MMIC,pHEMT ]

• A Ka-band 35-dBm P0.1dBLow-loss Monolithic SPDT Switch using Anti-series Diode Connection
  1112-1115, 2023-01-01
  [ Diode,GaAs,microwave and millimeter-wave (mm-wave),PIN,switch ]

• A V-band CMOS Sextuple Sub-harmonically Injection-locked VCO using Transformer and Cascade-series Coupling with FTL
  65-68, 2023-01-01
  [ CMOS,frequency-locked loop,low phase noise,millimeter-wave,RFIC,voltage-controlled oscillator ]

• A Ka-band Low-noise High-gain Frontend Receiver in Monolithic E-mode PINHEMT Technology for Millimeter-wave Radiometers
  53-55, 2023-01-01
  [ GaAs,HEMT,low noise,millimeter-wave,MMIC,PIN diode,receiver ]

• A 15-20 GHz Watt-level GaAs Power Amplifier Module Using Single-bias Technique
  623-625, 2023-01-01
  [ Digital pre-distortion,GaAs,microwave,power amplifier,satellite communication ]

• A 36-42 GHz 0.18-μm CMOS Amplifier Using Cascode-Cascade Matching Topology for Millimeter-wave Broadband Applications
  626-628, 2023-01-01
  [ broadband,CMOS,low noise amplifier (LNA),millimeter-wave,RFIC ]

• A K-band 0.18-μm CMOS Quadrature Phase-Locked Loop Using Injection-Locking Technique
  852-854, 2023-01-01
  [ CMOS,phase-locked loop (PLL),quadrature voltage-controlled oscillator (QVCO),transformer-feedback ]

• A W-band Quadrature Voltage-Controlled Oscillator with an Injection-Locked Frequency Divider in 40-nm CMOS Process
  2021-08-25
  [ CMOS,low phase noise,millimeter-wave,voltage-controlled oscillator,W-band. ]

• A 0.5-W 26-31 GHz Power Amplifier Using Pre-matching Technique in 0.15-μm pHEMT Process
  2021-08-25
  [ GaAs,Ka-band,millimeter-wave,MMIC,pHEMT,power amplifier,pre-matching ]

• A 30-36.6 GHz Low Jitter Degradation SIL QVCO with Frequency-tracking Loop in 65 nm CMOS for 5G Frontend Applications
  241-244, 2021-01-10
  [ 5G,CMOS,local oscillation,low jitter,low phase noise,microwave,millimeter-wave,RFIC ]

• A 3D rectenna with all-polarization and omnidirectional capacity for IoT applications
  1188-1190, 2020-08-01
  [ 3D rectenna,All- polarizationw,Dual-linearized rectenna,Omnidirection,Wireless power transmitting ]

• A 12-to-17 GHz power amplifier using T-model matching network in 0.25-μm GaN pHEMT technology
  980-982, 2019-12-01
  [ GaN,Ku-band,Microwave,Millimeterwave,MMIC,Power amplifier ]

• Stability Evaluation of a Broadband Multi-Stage Low Noise Amplifier using Nonlinear Analysis
  2019-08-01
  [ autonomous circuit,broadband,GaAs,low noise amplifier,microwave and MMW,MMIC,pHEMT,stability ]

• An 100-to-110 GHz Low-dc-power Sub-harmonically Injection-Locked Quadrature Oscillator using Stacked Boosting Technique in 90-nm CMOS Process
  381-384, 2019-06-01
  [ CMOS,low phase noise,millimeter-wave,MMIC/RFIC,oscillator,quadrature modulation,W-band ]

• A K-band CMOS Low-Phase-Noise Sub-harmonically Injection-Locked QVCO with Divider-less Frequency-tracking Loop
  377-380, 2019-06-01
  [ CMOS,injection-locked,K-band,low phase noise,microwave and millimeter-wave (MMW),RFIC,voltage-controlled oscilla-tor (VCO) ]

• A 76-98 GHz broadband low-DC-power low noise amplifier using coplanar waveguide in 40 nm CMOS process
  663-665, 2019-01-16
  [ CMOS,Coplanar waveguide,LNA,Low power,Millimeter-wave,W-band ]

• 10-MHz-to-70-GHz ultra-wideband low-insertion-loss SPST and SPDT switches using GaAs PIN Diode MMIC process
  1217-1219, 2019-01-16
  [ GaAs,Microwave,Millimeter-wave,MMIC,PIN diode,Power handling capability,SPDT,SPST,Switch ]

• A low droop rate wide input bandwidth high dynamic range track-and-hold amplifier in 0.18 urn SiGe process
  1510-1512, 2019-01-16
  [ High-speed analog CMOS design,RF and mixed signal IC design,RF front ends sampling circuits,SiGe ]

• A K-Band Frequency Doubler in 0.15-μ m GaAs pHEMT with an Autonomous Circuit for Stability Analysis
  2018-11-05
  [ E-mode,frequency doubler,GaAs,Gm-boosted technique,microwave and MMW,MMIC,pHEMT ]

• A 17.5-dBm Output Power 11.2% DC-to-RF Efficiency Low Phase Noise CMOS Quadrature Voltage-Controlled Oscillator
  1434-1437, 2018-08-17
  [ CMOS,high efficiency,high output power,low phase noise,microwave,oscillator,quadrature,VCO ]

• A low loss high isolation double-pole double-throw traveling-wave switch using 0.5-μm GaAs process
  2001-2005, 2017-11-20
  [ double-pole double-throw (DPDT),switch ]

• A 27-GHz 45-dB SFDR track-and-hold amplifier using modified darlington amplifier and cascoded SEF in 0.18-μm SiGe process
  137-140, 2017-10-04
  [ High-speed analog CMOS design,RF and mixed signal IC design,RF front ends,Sampling circuits,SiGe ]

• A V-band low-phase-noise low-jitter sub-harmonically injection-locked QVCO with high quadrature accuracy in 90-nm CMOS process
  1359-1362, 2017-10-04
  [ CMOS,Low jitter,Low phase noise,Millimeter-wave,MMIC,Quadrature modulation,RFIC,Voltage-controlled oscillator ]

• A 25-65 GHz broadband low-LO-driving wide-modulation-bandwidth monolithic BPSK modulator in GaAs PIN diode MMIC process
  910-913, 2017-06-28
  [ BPSK,GaAs PIN diode,MMIC,modulator,phase shifter,reflection-type modulator ]

• A Ka-band 25-dBm output power high efficiency monolithic Doherty power amplifier in 0.15-μm GaAs E-mode pHEMT process
  984-987, 2017-06-28
  [ Doherty power amplifier (DPA),GaAs,Ka-band,microwave,millimeter-wave,MMIC,RFIC ]

• A DC-to-82.4-GHz broadband amplifier using bandwidth extension technique in 0.15 μm pHEMT Process
  2017-05-17
  [ Broadband amplifier , Common-source (CS) , PHEMT , Resistive feedback technique ]

• A 49-to-64 GHz frequency doubler using active CS-based Gw-boosted technique in 90 nm CMOS process
  397-400, 2016-12-07
  [ CMOS , frequency multipliers , Gm-boosted , millimeter-wave , RFICs/MMICs ]

• A 24.5-50 GHz mixer using cascode structure with wide 0.5-16 GHz intermediate frequency bandwidth based on low noise PHEMT process
  897-899, 2016-10-19
  [ Cascode , mixerr , PHEMT ]

• Broadband radio-frequency integrated circuits and modules for astronomical instruments in Taiwan
  2016-09-27
  [ diode mixers,low-noise amplifiers,low-noise heterodyne receivers,resistive FET mixers ]

• A V-band 65 nm CMOS low DC power low phase noise PLL using divide-by-three injection-locked frequency divider
  2016-09-27
  [ CMOS , injection-locked frequency divider (ILFD) , millimeter-wave (MMW) , phase-locked loop (PLL) ]

• A 35-50 GHz triple cascode mixer module with intermediate frequency of 4-12 GHz based on low noise GaAs PHEMT process
  2016-09-27
  [ PHEMT , Triple cascode ]

• Compact parallel-coupled sext-band bandpass filter using semi-lumped resonators
  2016-08-09
  [ Semi-lumped resonator , sext-band bandpass filter , transmission zero ]

• A 2-to-67 GHz 0-dBm LO power broadband distributed NMOS-HBT Darlington mixer in 0.18 μm SiGe process
  2016-08-09
  [ BiCMOS , CMOS , Darlington , distributed mixer , microwave and millimeter-wave (MMW) , SiGe ]

• A 55-dB SFDR 16-GS/s track-and-hold amplifier in 0.18 μm SiGe using differential feedthrough cancellation technique
  2016-08-09
  [ CMOS , high-speed analog design , RF and mixed-signal integrated circuit (IC) , sampling circuits , SiGe ]

• A 90 nm CMOS low phase noise sub-harmonically injection-locked voltage-controlled oscillator with FLL self-alignment technique
  2016-08-09
  [ CMOS , frequency-locked loop , injection locking , low phase noise , microwave , VCO ]

• Evaluation of A D-band divide-by-3 injection-locked frequency divider in 65 nm CMOS process
  184-186, 2016-01-08
  [ CMOS , D-band , Frequency divider , Millimeter-wave (MMW) , Voltage-controlled oscillator ]

• A 42-71 GHz 90 nm CMOS injection-locked voltage-controlled oscillator using bulk injection technique
  108-111, 2015-12-02
  [ CMOS , microwave , MMIC , MMW , RFIC , V-band , voltage-controlled oscillator (VCO) , W-band ]

• A F-band two-element phased-array receiver using reflection-Type vector modulator in 90-nm CMOS technology
  2015-01-01
  [ CMOS , K-band , LNA , microwave , MMW , phase array , vector modulator ]

• A 31.2% locking range K-band divide-by-6 injection-locked frequency divider using 90 nm CMOS technology
  2015-01-01
  [ CMOS , frequency divider , high speed , microwave and millimeter-wave (MMW) , wide locking range ]

• A K-band low power high accuracy quadrature VCO using gate-modulated coupling and transformer feedback technique
  895-897, 2014-03-25
  [ CMOS , Low phase noise , Low power , Microwave , MMW , Quadrature VCO (QVCO) , Transformer feedback ]

• A 12 GB/s 3-GHz input bandwidth track-and-hold amplifier in 65 nm CMOS with 48-dB spur-free dynamic range
  2014-01-01
  [ CMOS , high-speed , sample-and-hold amplifiers (SHAs) , track-and-hold amplifiers (THAs) ]

• A W-band divide-by-1.5 injection-locked frequency divider in 90 nm CMOS process
  2014-01-01
  [ CMOS , fractional frequency divider , injection locked frequency divider (ILFD) , injection pulling , MMW ]

• A 44-49 GHz low phase noise CMOS voltage-controlled oscillator with 10-dBm output power and 16.1% efficiency
  2014-01-01
  [ CMOS , low phase noise , millimeter-wave , monolithic microwave integrated circuit (MMIC) , voltage controlled oscillator ]

• A 2.2-2.4 GHz self-aligned sub-harmonically injection-locked phase-locked loop using 65 nm CMOS process
  269-272, 2014-01-01
  [ CMOS , DLL , low jitter , low phase noise , PLL , VCO ]

• A K-band high performance frequency quadrupler using CG-CS balanced configuration in E/D-mode PHEMT process
  249-252, 2014-01-01
  [ frequency multiplier , GaAs , microwave , MMIC , MMW , PHEMT ]

• A 60-GHz low DC power self-injection coupling CMOS quadrature voltage-controlled oscillator with high quadrature accuracy
  2013-12-01
  [ CMOS , Low dc power , Low phase noise , Quadrature voltage-controlled oscillator (QVCO) ]

• A monolithic DC-70-GHz broadband distributed amplifier using 90-nm CMOS process
  1511-1514, 2013-12-01
  [ Cascaded single-stage amplifier (CSSDA) , CMOS , conventional distributed amplifier (CDA) , inductive peaking technique , m-derived network ]

• A monolithic DC-70-GHz broadband distributed amplifier using 90-nm CMOS process
  540-543, 2013-12-01
  [ Cascaded single-stage amplifier (CSSDA) , CMOS , Conventional distributed amplifier (CDA) , Inductive peaking technique , M-derived network ]

• Design of a DC-33 GHz cascode distributed amplifier using dual-gate device in 0.5-μm GaAs E/D-mode HEMT process
  728-730, 2013-12-01
  [ Distributed amplifier , dual-gate device , enhancement/depletion-mode (E/D-mode) , MMIC ]

• A K-band monolithic broadband low phase noise voltage controlled oscillators using HBT-HEMT cascode topology
  784-786, 2013-12-01
  [ GaAs,HBT,HEMT,phase noise,VCO ]

• A 25-to-70 GHz and low LO power mixer using modified SiGe NMOS-HBT Darlington cell for Gigabit BPSK demodulation
  2013-12-01
  [ BPSK , CMOS , Darlington , Demodulator , HBT , Millimeter-wave , Mixer , NMOS , SiGe ]

• Design of a V-band active integrated antenna (AIA) with voltage controlled oscillator
  2012-12-10
  [ active integrated antenna , antenna , Voltage controlled oscillator , Yagi-Uda ]

• Development of receiver and local oscillator components for Atacama Large Millimeter/submillimeter Array (ALMA) Band-1 in Taiwan
  2012-12-01
  [ Cryogenically cooled low-noise amplifier , Local oscillators , MHEMT , MMICs , PHEMT ]

• A cryogenic 30-50 GHz balanced low noise amplifier using 0.15-μm MHEMT process for radio astronomy applications
  177-179, 2012-12-01
  [ Cryogenic , low noise amplifier , metamorphic high electron mobility transistor ]

• Monolithic 2-μm/0.5-μm GaAs HBT-HEMT (BiHEMT) process for low phase noise voltage controlled oscillators (VCOs)
  1235-1237, 2012-12-01
  [ GaAs , heterojunction bipolar transistor (HBT) , pseudomorphic high-electron mobility transistor (PHEMT) , voltage-controlled oscillator (VCO) ]

• A monolithic DC-31 GHz distributed amplifier using cascode HBT-NMOS gain cell in 0.18 μm SiGe technology
  211-213, 2012-12-01
  [ Distributed amplifier (DA) , heterojunction bipolar transistor (HBT) , SiGe ]

• Low-voltage high-speed antimonide-based compound semiconductor (ABCS) 2-μm InAs/AlSb HEMT MMIC process and its broadband switch application
  196-198, 2012-12-01
  [ antimonide-based compound semiconductor (ABCS) , high electron-mobility transistor (HEMT) , monolithic microwave integrated circuit (MMIC) , switch ]

• A wide modulation bandwidth bidirectional CMOS IQ modulator/demodulator for microwave and millimeter-wave gigabit applications
  8-11, 2012-12-01
  [ bidirectional , CMOS , demodulation , modulation ]

• A 20.7% locking range W-band fully integrated injection-locked oscillator using 90 nm CMOS technology
  2012-10-03
  [ CMOS , Millimeter-wave , Oscillator , Phase noise , W-band ]

• A ka-band broadband active frequency doubler using CB-CE balanced configuration in 0.18 μm SiGe BiCMOS process
  2012-10-03
  [ Frequency doubler , Ka-band , SiGe BiCMOS ]

• A fully integrated power amplifier with switched output network in GaAs HBT-HEMT process
  208-211, 2011-12-01
  [ BiFET , GaAs , HBT , linearity , PAE , PHEMT , power amplifier , switch ]

• A K-band linearized amplifier with a modified third-order transconductance cancellation technique in 0.18 μm CMOS process
  363-366, 2011-12-01
  [ CMOS , linearization , third-order intermodulation (IM3) , third-order transconductance (g ) m3 ]

• Bandwidth enhancement of cascode distributed amplifiers using inductive peaking technique and modified m-derived network
  13-16, 2011-12-01
  [ Distributed amplifier (DA) , enhancement- and depletion-mode high electron-mobility transistor (E/D-mode HEMT) , monolithic microwave integrated circuit (MMIC) ]

• A K-band high efficiency high output power CG-CS frequency doubler in 0.5-m GaAs E/D-mode PHEMT process
  1258-1261, 2011-12-01
  [ frequency doubler , high efficiency , K-band ]

• A fully integrated 2.4-GHz 0.5-W high efficiency class-E voltage controlled oscillator in 0.15-μm PHEMT process
  864-867, 2011-12-01
  [ class-E , efficiency , monolithic microwave integrated circuit (MMIC) , oscillator , phase noise , pseudomorphic high-electron mobility transistor (PHEMT) ]

• Cryogenic evaluation of a 30-50 GHz 0.15-μm MHEMT low noise amplifier for radio astronomy applications
  934-937, 2011-12-01
  [ broadband , cryogenic , low noise amplifier , MHEMT , radio astronomy ]

• Design and analysis of two modified Colpitts VCOS with and without transformer feedback
  430-433, 2011-12-01
  [ Colpitts , K-band , MMIC , phase noise , PHEMT , quality factor , transformer feedback , VCO , voltage-controlled oscillator ]

• Linearity enhancement of CMOS device using a modified third-order transconductance cancellation technique for microwave amplifier
  2011-09-07
  [ Amplifier , CMOS , linearization , third-order transconductance ]

• A 60-GHz 2×2 phased-array transmitter using injection-locked oscillator in 0.18 μm CMOS technology
  538-541, 2010-12-01
  [ CMOS , injection-locked oscillator , millimeter-wave , phased-array ]

• A Dual-gate subharmonic injection-locked oscillator using 0.5 μm GaAs pHEMT technology
  940-943, 2010-12-01
  [ Dual-gate , enhanced/depletion-mode HEMT , injection locked oscillator , subharmonic injection locking ]

• A new estimation method of efficiency for class-E power amplifier operated above theoretical maximum operation frequency
  1015-1018, 2010-12-01
  [ class-E PA , high efficiency PA , inverse class-E PA , Power amplifier (PA) ]

• An innovative injection-locked frequency divider with transformer transconductance-boosted technique
  778-781, 2010-12-01
  [ CMOS , injection-locked frequency divider (ILFD) , transconductance (g ) m ]

• A 24-GHz highly integrated transceiver in 0.5-μm E/D-PHEMT process for FMCW automotive radar applications
  512-515, 2010-12-01
  [ Enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT) , frequency modulation continuous wave (FMCW) , microwave , radar ]

• Cold-mode characteristics of 90 nm CMOS device with negative body bias and highly linear millimeter-wave switch applications
  554-557, 2010-12-01
  [ CMOS , microwave , millimeter-wave , switch , traveling wave ]

• Design of a 0.5-30 GHz Darlington amplifier for microwave broadband applications
  137-140, 2010-10-15
  [ Darlington amplifier , HBT ]

• A low phase noise low DC power quadrature voltage-controlled oscillator using a 0.18-μm CMOS process
  112-115, 2009-12-28
  [ CMOS , Modulator , Monolithic microwave integrated circuit (MMIC) , Quadrature voltage controlled oscillator (QVCO) ]

• A linearity improved GaAs pHEMT power amplifier using common-gate/common- source circuit topology
  491-494, 2009-12-28
  

• Comparison of enhancement- and depletion-mode triple stacked power amplifiers in 0.5 μm AlGaAs/GaAs PHEMT technology
  222-225, 2009-12-28
  [ Enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT) , Power Amplifier (PA) , Stacked PA ]

• Design of a broadband low imbalance active balun using darlington cell technique in 0.35-μm SiGe BiCMOS process
  385-388, 2009-12-01
  [ Active balun , Bicmos , Broadband , Darlington pair , Microwave ]

• A 20-to-60 GHz CMOS frequency tripler based on a BPSK modulator
  2264-2267, 2009-12-01
  [ CMOS , Frequency conversion , Millimeter-wave signal generation ]

• A low-power CMOS injection-locked frequency divider based on hybrid differential injection technique
  301-304, 2009-12-01
  [ CMOS , Frequency divider , Injection locking , Wide locking range ]

• A 60-110 GHz low conversion loss tripler in 0.15-μm MHEMT process
  377-380, 2009-12-01
  [ Diode tripler , InGaAS , MHEMT , Millimeterwave , W-band ]

• A linearity improved GaAs pHEMT power amplifier using common-gate/common- source circuit topology
  1844-1847, 2009-12-01
  

• Q-band low noise amplifiers using a 0.15-μm MHEMT process for broadband communication and radio astronomy applications
  455-458, 2008-12-12
  [ Broadband , High gain , InGaAs , Low noise figure , MHEMT ]

• An eight-phase voltage controlled oscillator with reflection-type modulators in 0.18-μm CMOS technology
  1465-1468, 2008-12-12
  [ Multi-phase , Phase noise , Reflection-type modulator , VCO ]

• Ka-band wide-bandwidth voltage-controlled oscillators in InGaP-GaAs HBT technology
  358-361, 2008-12-01
  

• A Broadband stacked power amplifier using 2-μm GaAs HBT Process for C-band applications
  2008-12-01
  [ GaAs , HBT , Power amplifier (PA) , Stacked power amplifier ]

• A 29-GHz low phase noise differential voltage controlled oscillator using 2-μm GaAs HBT process
  2008-12-01
  

• A low-power subharmonic injection-locked oscillator using E/D-mode GaAs PHEMTs for Ka-band applications
  2008-12-01
  [ Cascode amplifier , E/D-mode GaAs PHEMT , Injection-locked oscillator ]

• 24-GHz MMIC development using 0.15-μm GaAs PHEMT process for automotive radar applications
  2008-12-01
  [ GaAs , PHEMT , Radar ]

• Cryogenic testing and multi-chip module design of a 31.3-45GHz MHEMT MMIC-based heterodyne receiver for radio astronomy
  2008-09-26
  [ HBT , MHEMT , MMIC , Multi-chip module , Q-band receiver , VCO ]

• Wide-bandwidth InGaP-GaAs HBT voltage-controlled oscillators in K- and Ku-band
  2008-09-03
  [ GaAs , HBT , Low phase noise , VCO , Wide tuning range ]

• A Ku-band low phase noise wide tuning range voltage controlled oscillator using 2-μm GaAs HBT process
  2007-12-01
  [ GaAs , HBT , Low phase noise , VCO , Wide tuning range ]

• Design of power amplifiers using stacked topology
  2007-12-01
  [ HBT , Power amplifier , Stacked topology ]

• A 40-74 GHz amplitude/phase control MMIC using 90-nm CMOS technology
  115-118, 2007-12-01
  [ CMOS , Monolithic microwave integrated circuit (MMIC) , Phase shifter , Vector sum method ]

• A 35-50 GHz IQ-demodulator in 0.13-μm CMOS technology
  1397-1400, 2007-10-02
  [ CMOS , Demodulator , Gilbert cell , Microwave monolithic integrated circuit (MMIC) , Mixer ]

• A miniature 35-110 GHz modified reflection-type BPSK modulator using 65-nm CMOS technology
  2165-2168, 2007-10-02
  [ BPSK , Broadband , CMOS , MMW , Modulator ]

• A Q-band low phase noise voltage controlled oscillator using balanced π-feedback in 2-μm GaAs HBT process
  119-122, 2007-10-02
  [ π-feedback and VCO , GaAs , HBT , Low phase noise ]

• A 60GHz low-power six-port transceiver for gigabit software-defined transceiver applications
  192-194, 2007-01-01
  

• A compact 35-65 GHz up-conversion mixer with integrated broadband transformers in 0.18-μm SiGe BiCMOS technology
  213-216, 2006-12-01
  [ HBT , Millimeter-wave (MMW) , Mixer , SiGe , Transformer , Up-converter ]

• A 45-GHz quadrature voltage controlled oscillator with a reflection-type IQ modulator in 0.13-μm CMOS technology
  739-742, 2006-12-01
  [ CMOS , Direct conversion , Modulator , QVCO ]

• A 30-GHz low-phase-noise 0.35-μm CMOS push-push oscillator using micromachined inductors
  569-572, 2006-12-01
  [ Micromachined inductors , Voltage-controlled oscillators (VCOs) ]

• A low noise bulk-coupled Colpitis CMOS quadrature VCO
  997-1000, 2006-12-01
  [ CMOS integrated circuit , Colpitis oscillator , Phase noise , Quadrature ]

• A 3-34 GHz GaAs PHEMT distributed mixer with low DC power consumption
  73-76, 2006-12-01
  [ Coplanar waveguide , Distributed mixer , Microwave , Millimeter-wave (MMW) ]

• A low phase noise 26-GHz push-push VCO with a wide tuning range in 0.18-μm CMOS technology
  1128-1131, 2006-01-01
  [ Phase noise , pMOS , Voltage-controlled oscillator (VCO) ]

• Design and analysis of CMOS broad-band compact high-linearity modulators for gigabit microwave/millimeter-wave applications
  20-30, 2006-01-01
  [ Binary phase-shift keying (BPSK) , CMOS , Coupler , Millimeter wave (MMW) , Quadrature amplitude modulator (QAM) ]

• New miniature 15-20-GHz continuous-phase/amplitude control MMICs using 0.18-μm CMOS technology
  10-18, 2006-01-01
  [ CMOS , Monolithic microwave integrated circuit (MMIC) , Phase shifter , Vector sum method ]

• An ultra compact and broadband 15-75 GHz BPSK modulator using 0.13-μm CMOS process
  41-44, 2005-12-01
  [ BPSK , CMOS , Millimeter-wave (MMW) , MMIC , Modulator , Reflection-type ]

• DC-to-135 GHz SPST and 15-to-135 GHz SPDT traveling wave switches using FET-integrated CPW line structure
  1393-1396, 2005-12-01
  [ CPW , pHEMT , SPDT , SPST ]

• A 44-GHz high-linearity MMIC medium power amplifier with a low-loss built-in linearizer
  1575-1578, 2005-12-01
  [ Linearizer , Millimeter-wave (MMW) , Monolithic microwave integrated circuit (MMIC) , Nonlinear , Power amplifier (PA) ]

• A 131 GHz push-push VCO in 90-nm CMOS technology
  613-616, 2005-11-16
  [ CMOS , Cross-coupled , Millimeter-wave (MMW) , MMIC , Phase noise , Push-push , Voltage-controlled oscillator (VCO) ]

• A low phase noise 52-GHz push-push VCO in 0.18-μm bulk CMOS technologies
  131-134, 2005-11-15
  [ CMOS , Thin-film microstrip line , VCO ]

• A W-band high-power predistorted direct-conversion digital modulator for transmitter applications
  600-602, 2005-09-01
  [ Linearization , Millimeter-wave (MMW) , Quadrature amplitude modulation (QAM) , Quadrature phase shift keying (QPSK) , W-band direct-conversion transmitter ]

• A 63GHz VCO using a standard 0.25μm CMOS process
  2004-06-02
  

• A 63GHz VCO using a standard 0.25μm CMOS process
  368-369, 2003-12-01
  

• A broadband HBT MMIC IQ modulator and millimeter-wave vector signal characterization
  99-102, 2003-08-18